On November 11, Hefei Rui investment group (hereinafter referred to as Hefei) Co., Ltd. (hereinafter referred to as “the joint venture capital investment agreement”) and Hefei Rui group (hereinafter referred to as “HEC”) have signed a joint announcement on November 11; The supplementary agreement on Zhaoyi Chuang’s provision of 300 million yuan convertible loan to Hefei Changxin integrated circuit Co., Ltd. (hereinafter referred to as “Changxin IC”) in the form of convertible creditor’s rights. < p > < p > according to the supplementary agreement, Zhaoyi innovation now plans to invest RMB 300 million with Changxin integration, Hefei Shixi power enterprise management partnership (limited partnership) (hereinafter referred to as “Shixi Jidian”) and national integrated circuit industry investment fund phase II Co., Ltd A number of investors, such as “the second phase of the big fund”) and Anhui Sanzhong Yichuang Industrial Development Fund Co., Ltd. (hereinafter referred to as “sanjong Yichuang”), etc., signed the capital increase agreement of Ruili integrated circuit Co., Ltd. (hereinafter referred to as “the increase of capital”) In order to complete the equity conversion investment as stipulated in the convertible creditor’s rights investment agreement, the shareholders’ agreement on Ruili integrated circuit Co., Ltd. (hereinafter referred to as the “shareholders’ agreement”) shall jointly participate in the capital increase of Ruili integration. Before the capital increase, the total registered capital of Ruili integration was 18.9 billion yuan, and the paid in registered capital was 18.9 billion yuan. Among them, Shixi Jidian invested 13.044 billion yuan, accounting for 69.01%; Changxin integrated power invested 5.856 billion yuan, accounting for 30.99%. < p > < p > after the capital increase, Zhaoyi innovation will hold about 0.85% equity of Ruili integration. According to the capital increase of Ruili integration by other institutions exposed in Zhaoyi innovation announcement, in addition to Zhaoyi innovation, big fund phase II and Anhui Sanzhong Yichuang fund respectively invested 4.76 billion yuan to participate in the capital increase of Ruili integration, with the shareholding ratio of 14.08%. < / P > < p > in addition, Changxin integration also increased its capital by 808 million yuan, with a shareholding ratio of 19.72%; Hefei Jixin enterprise management partnership (limited partnership) contributed about 476 million yuan, with a shareholding ratio of 1.41%; other “follow-up investors” contributed about 3.808 billion yuan, with a shareholding ratio of 11.27%. < / P > < p > in general, only in this round of capital increase, Ruili integration has completed a total of about 14.899 billion yuan of capital increase. After the completion of capital increase, the total amount of shareholders’ capital contribution obtained by Ruili integration has reached 33.799 billion yuan! It is understood that Ruili is mainly engaged in the production, R & D, design and sales of integrated circuits and related products. Changxin Storage Technology Co., Ltd. (hereinafter referred to as “Changxin storage”) is the only wholly-owned subsidiary of Ruili integration. At present, Changxin storage is also the only DRAM memory manufacturer in China. Obviously, the domestic investors such as DRAM will further accelerate the development of RMB 15 billion of innovation. It is worth mentioning that at present, Zhu Yiming, chairman of Zhaoyi innovation, is also the chairman of Changxin storage. At the same time, Mr. Zhu Yiming controls Hefei Shixi Changxin enterprise management partnership (limited partnership) (i.e. executive partner of Shixi Jidian, hereinafter referred to as “Shixi Changxin”). Before this capital increase, Ruili integration, the target company of Shixi Jidian, was 69.01%. < / P > < p > according to the announcement, the value of DRAM products purchased by Zhaoyi innovation from Changxin storage was about 179555800 yuan, and the value of products jointly developed by both parties was about 1966.68 million yuan. According to the global DRAM memory chip market data released by trendforce in the second quarter of 2020, Samsung, SK Hynix and Meguiar occupy 94.6% of the global market share. South Asia technology ranked fourth, with a market share of only 3.2%, while the share of other manufacturers was less than 1%. < / P > < p > obviously, in the DRAM memory chip market, the three leading manufacturers have formed a strong monopoly position, leaving very little space for other manufacturers. However, with the efforts of domestic DRAM chip manufacturers and relying on the huge domestic market demand, the market share of domestic DRAM chips is also rising rapidly. < / P > < p > according to the data, since the successful mass production of DRAM chips of Changxin storage in the fourth quarter of last year, the wafer input volume of Changxin storage has continued to grow. Although the chip output in the first quarter of this year is only 10000 pieces / month, with the further expansion of DRAM products in the client side, its production capacity is also continuously expanding, and its chip input has rapidly increased to 45000 in the fourth quarter of this year Film / month. < / P > < p > according to the prediction of trendforce, by the fourth quarter of 2021, Changxin storage will deliver 85000 pieces / month, which will successfully surpass South Asia Technology (71000 pieces / month), the fourth largest DRAM chip manufacturer in the world after Samsung, SK Hynix and micron. < / P > < p > of course, the so-called fourth place, in fact, does not have much significance, because there is a huge gap compared with the top three. Even if Meguiar, the third ranked company, will produce 355000 films / month in the fourth quarter of next year, which is about 4.18 times of the predicted 85000 pieces / month of Changxin storage. < / P > < p > such a huge gap can not be caught up in a short period of time. In addition, there is a big gap between Changxin storage and the top three manufacturers in DRAM technology. < / P > < p > according to the data, at present, Changxin mainly produces DDR4 / lpddr4 / lpddr4x chips with 19nm process, which has been adopted by storage brand manufacturers such as Weigang technology and jiangbolong forestee. However, in terms of DRAM technology, Changxin storage lags 2-3 years behind Samsung and other first-line DRAM manufacturers. Therefore, rapid improvement of technical level is also the key to Changxin storage’s firm foothold in DRAM market. < p > < p > according to the work plan for unveiling key areas of short board products and key technology research tasks released by Anhui Province in early July this year, it is hoped to solve some key technical bottlenecks within 2-3 years. In terms of memory technology, it is required to promote low-power and high-speed lpddr5 DRAM product development should be oriented to the independent and controllable demand of DRAM memory chips for medium and high-end mobile, tablet and consumer products, develop advanced low-power and high-speed lpddr5 products and realize industrialization. Relying on DRAM technology of 17nm and below, we should tackle key problems such as high-speed interface technology, bank group architecture design technology, low-power power supply (voltage) technology and on die (on die) technology ECC) technology, completed the development of lpddr5 DRAM with low power consumption and high speed. Currently, only Changxin storage is the only DRAM memory chip manufacturer in China that has achieved mass production in China, and Changxin storage is also an enterprise located in Hefei, the capital of Anhui Province. Obviously, the memory technology research requirements proposed in this document are also put forward for Changxin storage. The roadmap of Changxin storage exposed earlier also shows that Changxin storage will launch DDR4 / lpddr4x and ddr5 / lpddr5 based on 10g3 process, ddr5 / lpddr5 and gddr6 based on 10G5 process. The 10g3 process here should refer to the 17nm process. Chinese version of K-car: reading a10e design drawing exposure

By ibmwl