Memory manufacturer Meguiar announced that its fifth generation 3D NAND flash technology has reached a record 176 layer stack. It is expected that through the new 176 layer 3D NAND flash technology and architecture, the application efficiency of data center, intelligent edge computing and smart phone storage can be greatly improved. < / P > < p > it is understood that 176 layer 3D NAND flash memory is Meguiar’s second replacement gate architecture, and it is the most advanced NAND node in the world at present. Compared with the previous generation of 3D NAND, the read and write latency of 176 layer 3D NAND flash memory is increased by 35%. In fact, Meguiar 176 layer flash memory is based on the superposition of two 88 layers. The first batch is TLC particles, and the capacity of a single die is 512gb (64GB). Of course, QLC is likely to be added later. < / P > < p > it is reported that micron 176 layer 3D NAND flash memory can provide better quality of service and accelerate data intensive environment and workload, such as database, artificial intelligence engine and big data analysis. < / P > < p > thanks to the new flash memory architecture and stacking technology, Meguiar controls the thickness of 176 layer flash memory to 45 μ m, which is basically equivalent to the early 64 layer floating gate 3D NAND. Therefore, even if 16 die are packaged in a single chip to achieve a single capacity of 1TB, the thickness will not exceed 1.5mm, so it can be easily put into smart phones and memory cards. Global Tech

By ibmwl