At the time of the flash summit, Meguiar also released the company’s fifth generation 3D NAND flash memory, which set a 176 layer stack record. As a second-generation product developed after breaking up with Intel, Meguiar has changed its storage cell design from floating gate to charge trap. The reason why the 128 layer transition node was used in the previous generation of 3D NAND is that the company hopes to solve any problems that may be encountered in technology switching. < / P > < p > it is reported that Meguiar’s 128 layer 3D NAND has a polar market share. Therefore, to a large extent, the latest generation of 176 layer 3D NAND will directly replace the 96 layer version. < / P > < p > what is known is that the first 176 layer 3D NAND of Meguiar adopts the design of merging double 88 layers (stacking 512gbit TLC flash memory). For more details, please wait until the end of this month. < / P > < p > switching to a charge trap storage cell also seems to greatly reduce the thickness of each layer. The current 176 layer bare chip is only 45 μ m, which is the same as Meguiar’s 64 layer floating gate 3D NAND. < / P > < p > 16 die stacked package is less than 1.5 mm thick and is suitable for most mobile / memory card scenarios. In addition, like the previous generation of Meguiar 3D NAND, most of the peripheral logic components of the chip are also manufactured by under array COMS (CUA) process. < / P > < p > finally, Meguiar has started mass production of 176 layers of 3D NAND, and the first batch of particles have been used in consumer grade SSD products under the brand of crucial. < / P > < p > although Meguiar has not yet disclosed which models are already in use (most of them are 128 layers), we are expected to see more 3D NAND memory chip replacement next year. Global Tech

By ibmwl