Recently, the reporter learned from Inner Mongolia University that the scientific research team led by researcher Wang Lei of Inner Mongolia University has made new progress in the research of semiconductor light corrosion resistance, which has been approved and supported by many projects such as the National Natural Science Foundation of China. The related results of “passivation layer assisted BiVO4 light corrosion resistance research” have been published in the International Chemical Journal “German Applied Chemistry” recently, which will help to improve the photoelectric conversion efficiency of solar hydrogen production. According to Wang Lei, a new clean energy source, hydrogen energy has always been a research hotspot of new energy sources. Photolysis of water for hydrogen production is one of the main technologies for obtaining hydrogen energy, and the conversion efficiency of solar energy for hydrogen production is the main performance index of photolysis water. The low optical absorptivity and high carrier recombination rate of semiconductors are the primary factors affecting the conversion efficiency. Therefore, how to improve the photoelectric conversion efficiency is the most important task in the field of photocatalysis. Due to its suitable band gap width of 2.4 EV, good light absorption performance and suitable conduction band position for water oxidation at low potential, BiVO4 semiconductor has become one of the important materials in the field of solar photocatalytic hydrogen production. However, the recombination of electrons and holes in BiVO4 material seriously affects the photo generated charge transport, which makes its solar photocatalytic performance lower than the theoretical value; at the same time, due to photocorrosion, it is not suitable for long-term photolysis of water. The common solution is to use surface cocatalyst modification to improve the charge separation efficiency of semiconductors, inhibit the charge recombination and accelerate the surface reaction kinetics. < / P > < p > the research team has effectively improved the activity and stability of BiVO4 by improving the material preparation process and potentiostatic photopolarization test method. The results show that the BiVO4 without surface cocatalyst modification can reach 100 hours stability under intermittent test, showing super strong “self-healing” characteristics. The electrochemical test shows that the passivation layer and oxygen vacancy on the surface of semiconductor can effectively reduce the recombination of electrons and holes, improve the surface water oxidation kinetics and inhibit the photo corrosion. [image] Google secretly tests 6GHz networks in 17 states of the United States

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