On September 19, innosecco Suzhou third generation semiconductor base held the equipment moving in ceremony. This means that innosecco’s Suzhou third generation semiconductor base has started from the plant construction stage to the preparation stage for mass production, marking the formal completion of the world’s largest Gan plant, and also marking the beginning of a new era in China’s semiconductor innovation history. < / P > < p > after the completion of the project, it will become the world’s largest third generation semiconductor industry chain R & D and production platform integrating R & D, design, epitaxial production, chip manufacturing and testing. After the completion of the project, 65000 pieces of 8-inch silicon-based Gan wafers will be produced each month. The products will be 5g mobile communication, data center, new energy vehicles, unmanned driving, mobile phone fast charging and other strategic emerging products Independent innovation and development of the industry provides core electronic components. Innosecco Suzhou third generation semiconductor base is located in FenHu high tech Zone, Wujiang District, Suzhou City, Jiangsu Province, with a total area of 245000 square meters. It is a key project in Jiangsu Province with a total investment of more than 6 billion yuan. The project is expected to enter the trial production stage by the end of this year. The relevant person in charge of innosecco said that the production of Gan power chip mass production line has filled the gap of China’s high-end semiconductor device industry, and also means that the technical bottleneck restricting China’s third-generation semiconductor industry has been broken through. Innosecco was established at the end of 2015. It is an enterprise specializing in the development and manufacturing of third-generation semiconductor silicon-based Gan chips. Since its establishment, it has successively introduced nearly 100 top talents from world-class well-known semiconductor enterprises, established an international first-class Semiconductor R & D team, carried out independent research and development work, and formed independent controllable core technology, and has applied for more than 290 items Core patents at home and abroad. < / P > < p > as the world’s leading silicon-based Gan power device manufacturer, innosecco adopts the IDM mode integrating R & D, design, production, manufacturing and testing, and the technology of the whole industrial chain is independently controllable. The business model has obvious advantages of high efficiency and low cost, which is superior to international friends. At the same time, the core technology of the whole industry chain can be controlled independently, which provides the best platform for the rapid iterative innovation of the company’s products. The main products of innosecco are 30v-650v Gan power devices, power modules and RF devices, etc., with the largest product coverage of gallium nitride enterprises in the world. The company’s IDM industrialization mode and the first 8-inch silicon-based gallium nitride power and RF device mass production line make the company’s products have market advantages of high performance, low cost and high reliability. Innosecco actively establishes and improves the ecosystem of the third generation semiconductor based on silicon-based gallium nitride, and cooperates with many international and domestic IC design companies, magnetic material companies, advanced packaging plants and other manufacturers to develop supporting systems for silicon-based gallium nitride and establish an independent and controllable ecosystem. Especially in the field of fast charging, innosecco “innogan” Gan power devices have been adopted by Meizu, Nubia, rock, Feifan, LaPO and other brands, and mass production has been realized, and the product performance has been recognized by the market. < / P > < p > next, innosecco will take advantage of the semiconductor industry foundation in the Yangtze River Delta to cooperate with more enterprises in the region to further form industrial chain clusters and help domestic semiconductors achieve “core” breakthrough. Global Tech